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Nanoscale Transistors: Device Physics, Modeling and Simulation
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Nanoscale Transistors: Device Physics, Modeling and Simulation Paperback - 2010

by Mark Lundstrom; Jing Guo

From the publisher

Silicon CMOS technology continues to drive progress in electronics, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. A variety of new devices are emerging as candidates to replace MOSFETs and continue the trend downward to molecular dimensions. Nanoscale MOSFET engineering, is still governed by techniques originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, this timely reference presents a clear understanding of device physics at the nano/molecular scale.

From the rear cover

NANOSCALE TRANSISTORS: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. Chapter 1 reviews some basic concepts, and Chapter 2 summarizes the essentials of traditional semiconductor devices, digital circuits, and systems. This material provides a baseline against which new devices can be assessed. Chapters 3 and 4 present a non-traditional view of the MOSFET using concepts that are valid at nanoscale. Chapter 5 applies the same concepts to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. Chapter 6 explores the limits of devices by discussing conduction in single molecules.

The book is a useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices.

Details

  • Title Nanoscale Transistors: Device Physics, Modeling and Simulation
  • Author Mark Lundstrom; Jing Guo
  • Binding Paperback
  • Edition Softcover reprin
  • Pages 218
  • Volumes 1
  • Language ENG
  • Publisher Springer
  • Date 2010-10-29
  • ISBN 9781441939159 / 1441939156
  • Weight 0.72 lbs (0.33 kg)
  • Dimensions 9.21 x 6.14 x 0.48 in (23.39 x 15.60 x 1.22 cm)
  • Dewey Decimal Code 621.381

About the author

Mark S. Lundstrom is the Scifres Distinguished Professor of Electrical and Computer Engineering at Purdue University where he also directs the NSF Network for Computational Nanotechnology. His current research interests center on the physics of semiconductor devices, especially nanoscale transistors. His previous work includes studies of heterostructure devices, solar cells, heterojunction bipolar transistors and semiconductor lasers. During the course of his Purdue career, Lundstrom has served as director of the Optoelectronics Research Center and assistant dean of the Schools of Engineering. He is a fellow of both the Institute of Electrical and Electronic Engineers (IEEE) and the American Physical Society and the recipient of several awards for teaching and research -- most recently the 2002 IEEE Cledo Brunetti Award and the 2002 Semiconductor Research Corporation Technical Achievement Award for his work with his colleague, S. Datta, on nanoscale electronics.

Jing Guo is an assistant professor of Electrical and Computer Engineering at University of Florida, Gainesville. His has worked on the theory, modeling and simulation of a variety of nanotransistors, including silicon nanotransistors, carbon nanotube transistors, and single electron transistors, in close collaboration with experimentalists. His current research interests focus on modeling and simulation of nanoscale devices, carbon nanotube electronics and optoelectronics, quantum transport, physics of nanoscale transistors, and parallel computation.

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Nanoscale Transistors : Device Physics, Modeling and Simulation
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Nanoscale Transistors : Device Physics, Modeling and Simulation

by Mark Lundstrom

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Nanoscale Transistors: Device Physics, Modeling and Simulation
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Nanoscale Transistors: Device Physics, Modeling and Simulation

by Lundstrom, Mark

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ISBN 10 / ISBN 13
9781441939159 / 1441939156
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